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September 2002
FDD2582
N-Channel PowerTrench ? MOSFET
150V, 21A, 66m ?
Features
? r DS(ON) = 58m ? (Typ.), V GS = 10V, I D = 7A
? Q g (tot) = 19nC (Typ.), V GS = 10V
? Low Miller Charge
? Low Q RR Body Diode
? UIS Capability (Single Pulse and Repetitive Pulse)
? Qualified to AEC Q101
Formerly developmental type 82855
Applications
? DC/DC converters and Off-Line UPS
? Distributed Power Architectures and VRMs
? Primary Switch for 24V and 48V Systems
? High Voltage Synchronous Rectifier
? Direct Injection / Diesel Injection System
? 42V Automotive Load Control
? Electronic Valve Train System
DRAIN
(FLANGE)
GATE
SOURCE
TO-252AA
FDD SERIES
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
G
D
S
Symbol
V DSS
V GS
Drain to Source Voltage
Gate to Source Voltage
Parameter
Ratings
150
± 20
Units
V
V
Drain Current
I D
E AS
P D
T J , T STG
Continuous (T C = 25 o C, V GS = 10V)
Continuous (T C = 100 o C, V GS = 10V)
Continuous (T amb = 25 o C, V GS = 10V, R θ JA = 52 o C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25 o C
Operating and Storage Temperature
21
15
3.7
Figure 4
59
95
0.63
-55 to 175
A
A
A
mJ
W
W/ o C
o C
Thermal Characteristics
Thermal Resistance Junction to Ambient TO-252, 1in copper pad area
R θJC
R θ JA
R θ JA
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
2
1.58
100
52
o
o
o
C/W
C/W
C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
?2002 Fairchild Semiconductor Corporation
FDD2582 Rev. B
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